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Materials Science In Semiconductor ProcessingSCIE

國際簡稱：MAT SCI SEMICON PROC 參考譯名：半導體加工中的材料科學

中科院分區(qū)
3區(qū)
CiteScore分區(qū)
Q1
JCR分區(qū)
Q2

基本信息：: ISSN：1369-8001; E-ISSN：1873-4081; 是否OA：未開放; 是否預警：否; TOP期刊：否

出版信息：: 出版地區(qū)：ENGLAND; 出版商：Elsevier Ltd; 出版語言：English; 出版周期：Bimonthly; 出版年份：1998; 研究方向：工程技術-材料科學：綜合

評價信息：: 影響因子：4.2; H-index：49; CiteScore指數(shù)：8; SJR指數(shù)：0.732; SNIP指數(shù)：0.992

發(fā)文數(shù)據(jù)：: Gold OA文章占比：5.21%; 研究類文章占比：96.22%; 年發(fā)文量：635; 自引率：0.0487...; 開源占比：0.0145; 出版撤稿占比：0; 出版國人文章占比：0.21; OA被引用占比：0.0123...

投稿咨詢加急見刊

英文簡介期刊介紹 CiteScore數(shù)據(jù) 中科院SCI分區(qū) JCR分區(qū) 發(fā)文數(shù)據(jù) 常見問題

英文簡介Materials Science In Semiconductor Processing期刊介紹

Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.

Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.

Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.

期刊簡介Materials Science In Semiconductor Processing期刊介紹

《Materials Science In Semiconductor Processing》自1998出版以來，是一本工程技術優(yōu)秀雜志。致力于發(fā)表原創(chuàng)科學研究結(jié)果，并為工程技術各個領域的原創(chuàng)研究提供一個展示平臺，以促進工程技術領域的的進步。該刊鼓勵先進的、清晰的闡述，從廣泛的視角提供當前感興趣的研究主題的新見解，或?qū)彶槎嗄陙砟硞€重要領域的所有重要發(fā)展。該期刊特色在于及時報道工程技術領域的最新進展和新發(fā)現(xiàn)新突破等。該刊近一年未被列入預警期刊名單，目前已被權(quán)威數(shù)據(jù)庫SCIE收錄，得到了廣泛的認可。

該期刊投稿重要關注點：

預計審稿時間：約1.7個月約3.7周
工程技術
ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
中科院3區(qū)
非預警

Cite Score數(shù)據(jù)（2024年最新版）Materials Science In Semiconductor Processing Cite Score數(shù)據(jù)

CiteScore：8
SJR：0.732
SNIP：0.992

學科類別	分區(qū)	排名	百分位
大類：Engineering 小類：Mechanical Engineering	Q1	87 / 672	87%
大類：Engineering 小類：Condensed Matter Physics	Q1	59 / 434	86%
大類：Engineering 小類：Mechanics of Materials	Q1	60 / 398	85%
大類：Engineering 小類：General Materials Science	Q1	100 / 463	78%

CiteScore 是由Elsevier(愛思唯爾)推出的另一種評價期刊影響力的文獻計量指標。反映出一家期刊近期發(fā)表論文的年篇均引用次數(shù)。CiteScore以Scopus數(shù)據(jù)庫中收集的引文為基礎，針對的是前四年發(fā)表的論文的引文。CiteScore的意義在于，它可以為學術界提供一種新的、更全面、更客觀地評價期刊影響力的方法，而不僅僅是通過影響因子(IF)這一單一指標來評價。

歷年Cite Score趨勢圖

中科院SCI分區(qū)Materials Science In Semiconductor Processing 中科院分區(qū)

中科院 2023年12月升級版 綜述期刊：否 Top期刊：否

大類學科	分區(qū)	小類學科	分區(qū)
工程技術	3區(qū)	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：電子與電氣 MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科學：綜合 PHYSICS, APPLIED 物理：應用 PHYSICS, CONDENSED MATTER 物理：凝聚態(tài)物理	3區(qū) 3區(qū) 3區(qū) 3區(qū)

中科院分區(qū)表 是以客觀數(shù)據(jù)為基礎，運用科學計量學方法對國際、國內(nèi)學術期刊依據(jù)影響力進行等級劃分的期刊評價標準。它為我國科研、教育機構(gòu)的管理人員、科研工作者提供了一份評價國際學術期刊影響力的參考數(shù)據(jù)，得到了全國各地高校、科研機構(gòu)的廣泛認可。

中科院分區(qū)表 將所有期刊按照一定指標劃分為1區(qū)、2區(qū)、3區(qū)、4區(qū)四個層次，類似于“優(yōu)、良、及格”等。最開始，這個分區(qū)只是為了方便圖書管理及圖書情報領域的研究和期刊評估。之后中科院分區(qū)逐步發(fā)展成為了一種評價學術期刊質(zhì)量的重要工具。

歷年中科院分區(qū)趨勢圖

JCR分區(qū)Materials Science In Semiconductor Processing JCR分區(qū)

2023-2024 年最新版

按JIF指標學科分區(qū)	收錄子集	分區(qū)	排名	百分位
學科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q2	89 / 352	74.9%
學科：MATERIALS SCIENCE, MULTIDISCIPLINARY	SCIE	Q2	158 / 438	64%
學科：PHYSICS, APPLIED	SCIE	Q2	51 / 179	71.8%
學科：PHYSICS, CONDENSED MATTER	SCIE	Q2	25 / 79	69%

按JCI指標學科分區(qū)	收錄子集	分區(qū)	排名	百分位
學科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q2	113 / 354	68.22%
學科：MATERIALS SCIENCE, MULTIDISCIPLINARY	SCIE	Q2	125 / 438	71.58%
學科：PHYSICS, APPLIED	SCIE	Q2	47 / 179	74.02%
學科：PHYSICS, CONDENSED MATTER	SCIE	Q1	19 / 79	76.58%

JCR分區(qū)的優(yōu)勢在于它可以幫助讀者對學術文獻質(zhì)量進行評估。不同學科的文章引用量可能存在較大的差異，此時單獨依靠影響因子(IF)評價期刊的質(zhì)量可能是存在一定問題的。因此，JCR將期刊按照學科門類和影響因子分為不同的分區(qū)，這樣讀者可以根據(jù)自己的研究領域和需求選擇合適的期刊。

歷年影響因子趨勢圖

發(fā)文數(shù)據(jù)

2023-2024 年國家/地區(qū)發(fā)文量統(tǒng)計

國家/地區(qū)數(shù)量
CHINA MAINLAND376
India309
South Korea97
Turkey76
Mexico73
Japan71
Iran65
USA63
Saudi Arabia55
Italy48

本刊中國學者近年發(fā)表論文

1、V2O5 nanobelts via a facile water-assisted strategy boosting electrochromic performance
Author: Sun, Haohao; Wang, Wenxuan; Fan, Qiongzhen; Qi, Yanyuan; Xiong, Yuli; Jian, Zelang; Chen, Wen

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 155, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107265
2、Ag/Ag3PO4 nanoparticles assembled on sepiolite nanofibers: Enhanced visible-light-driven photocatalysis and the important role of Ag decoration
Author: Ren, Xiaofei; Hu, Guicong; Guo, Qingbin; Gao, Dengzheng; Wang, Li; Hu, Xiaolong

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107272
3、Exploring the effect of oxygen environment on the Mo/CdTe/CdSe solar cell substrate configuration
Author: Yang, Xiutao; Long, Yuchen; Zheng, Yujie; Wang, Jiayi; Zhou, Biao; Xie, Shenghui; Li, Bing; Zhang, Jingquan; Hao, Xia; Karazhanov, Smagul; Zeng, Guanggen; Feng, Lianghuan

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107267
4、Slag refining at various viscosity conditions for SiC inclusion removal during Si scraps recycling
Author: Pan, Di; Jiang, Dachuan; Hu, Zhiqiang; Li, Pengting; Tan, Yi; Li, Jin; Li, Jiayan

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107274
5、Fabrication of interface-engineered Ni/NiO/rGO nanobush for highly efficient and durable oxygen reduction
Author: Wang, Yanan; Duan, Chunyang; Li, Junhua; Zhao, Zenghua; Xu, Jiasheng; Liu, Lin; Qian, Jianhua

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107259
6、The structural, mechanical and electronic properties of BaxNy compounds
Author: Wang, Gao-Min; Zeng, Wei; Zhang, Fan; Li, Xing-Han; Liu, Fu-Sheng; Tang, Bin; Zhong, Mi; Liu, Qi-Jun

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107268
7、Synergistic effect of 1,2,4-triazole and phytic acid as inhibitors on copper film CMP for ruthenium- based copper interconnected and the surface action mechanism analysis
Author: Luo, Fu; Niu, Xinhuan; Yan, Han; Zhang, Yinchan; Qu, Minghui; Zhu, Yebo; Hou, Ziyang

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107276
8、Hyperspectral camouflage coating using Palygorskite to simulate water absorption of healthy green leaves
Author: Lu, Haipeng; Bai, Xingzhi; Wang, Zhenxiong; Guo, Yang; Zhang, Li; Weng, Xiaolong; Xie, Jianliang; Liang, Difei; Deng, Longjiang

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107293